Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)
نویسندگان
چکیده
منابع مشابه
Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects
Spin-transfer torque (STT) switching demonstrated in submicron sized magnetic tunnel junctions (MTJs) has stimulated considerable interest for developments of STT switched magnetic random access memory (STT-MRAM). Remarkable progress in STT switching with MgO MTJs and increasing interest in STTMRAM in semiconductor industry have been witnessed in recent years. This paper will present a review o...
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When a sufficient current density passes through the MTJ, the spin-polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This is the fundamental of the novel write mechanism in STT-RAM, current-induced magnetization switching. It allows STT-RAM to have a smaller cell size and write current than MRAM, and also capable of what MRAM promises: fast, dens...
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We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1× 10 A cm. The thermal effect and current pulse width on spin-transfer magnetization swit...
متن کاملSpin Torque Transfer Mram as a Universal Memory
The current multi-core era has resulted in the integration of increasing numbers of cores into the microprocessors used to power computers and cell phones. Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology with the potential to be used as universal memory. STT MRAM with read and write current is discusses here . In addition to that application of STT MRAM as a cac...
متن کاملNegative-resistance read and write schemes for STT-MRAM in 0.13µm CMOS
Spin-torque-transfer (STT) magnetoresistive random-access memory (MRAM) [1-3], a successor to field-induced magnetic switching MRAM [4,5], is an emerging non-volatile memory technology that is CMOS-compatible, scalable, and allows for high-speed access. However, two circuit-level challenges remain for STT-MRAM: potentially destructive read access due to device variation and a high-power write a...
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ژورنال
عنوان ژورنال: SCIENTIA SINICA Physica, Mechanica & Astronomica
سال: 2016
ISSN: 1674-7275
DOI: 10.1360/sspma2016-00185